unisonic z chnologies co., ltd 9N90-Q power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-a93.b 9a, 900v n-channel power mosfet ? description the utc 9N90-Q uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 1.4 ? @ v gs = 10v, i d = 4.5a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 9n90l-ta3-t 9n90g-ta3-t to-220 g d s tube 9n90l-t3p-t 9n90g-t3p-t to-3p g d s tube ? marking
9N90-Q power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-a93.b ? absolute maximum rating (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v continuous drain current (t c = 25c) i d 9.0 a pulsed drain current (note 2) i dm 36 a avalanche current (note 2) i ar 9.0 a avalanche energy single pulsed(note 3) e as 500 mj repetitive(note 2) e ar 28 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-220 p d 147 w to-3p 208 w linear derating factor above t c = 25c to-220 1.176 w/c to-3p 1.66 w/c junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 12.35mh, i as = 9.0a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 9.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-3p 40 c/w junction to case to-220 jc 0.85 c/w to-3p 0.6 c/w
9N90-Q power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-a93.b ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown |)ltage bv dss v gs = 0 v, i d = 250 a 900 v drain-source leakage current i dss v ds = 900 v, v gs = 0 v 10 a gate-body leakage current forward i gssf v gs = 30 v, v ds = 0 v 100 na reverse i gssr v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.99 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds ( on ) v gs = 10v, i d = 4.5a 1.26 1.4 ? dynamic parameters input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0 mhz 1450 2730 pf output capacitance c oss 157 230 pf reverse transfer capacitance c rss 21 26 pf switching characteristics turn-on delay time t d ( on ) v dd = 30v, i d =0.5 a, r g = 25 ? (note 1, 2) 95 110 ns turn-on rise time t r 200 250 ns turn-off delay time t d ( off ) 340 390 ns turn-off fall time t f 200 250 ns total gate charge q g v ds =50v, i d = 1.3a, v gs = 10 v (note 1,2) 56 70 nc gate-source charge q gs 7.4 nc gate-drain charge q gd 17 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 9.0 a 1.4 v maximum continuous drain-source diode forward current i s 9.0 a maximum pulsed drain-source diode forward current i sm 36 a notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
9N90-Q power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-a93.b ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
9N90-Q power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-a93.b ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
9N90-Q power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-a93.b ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.7 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 2.1 2.8 4.2 1.4 3.5 0 50 100 150 200 250 300 0 200 600 800 1000 400 0 50 100 150 200 250 300 drain current, i d (a) continuous drain-source current, i sd (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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